- 您现在的位置：买卖IC网 > Sheet目录134 > MBR1080 (ON Semiconductor)DIODE SCHOTTKY 10A 80V TO-220AC
    MBR1080G, MBR1090G, MBR10100G, NRVB10100G http://onsemi.com 2 MAXIMUM RATINGS Rating Symbol MBR/NRVB Unit 1080 1090 10100 Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V V RRM RWM VR 80 90 100 V Average Rectified Forward Current (Rated VR) TC = 133 ?C IF(AV) 10 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz) TC = 133 ?C IFRM 20 A Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 150 A Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz) IRRM 0.5 A Operating Junction Temperature (Note 1) TJ 65 to +175 ?C Storage Temperature Tstg 65 to +175 ?C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/s Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction?to?Ambient: dPD/dTJ < 1/R JA. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Thermal Resistance, Junction?to?Case RJC 2.0 ?C/W Maximum Thermal Resistance, Junction?to?Ambient RJA 60 ?C/W ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 2) (iF = 10 Amps, T C = 125 ?C) (iF = 10 Amps, T C = 25 ?C) (iF = 20 Amps, T C = 125 ?C) (iF = 20 Amps, T C = 25 ?C) vF 0.7 0.8 0.85 0.95 V Maximum Instantaneous Reverse Current (Note 2) (Rated dc Voltage, TC = 125 ?C) (Rated dc Voltage, TC = 25 ?C) iR 6.0 0.10 mA 2. Pulse Test: Pulse Width = 300 s, Duty Cycle ? 2.0%. |